Study on ESR Properties of a-Si1-xGdx Films
来源期刊：Journal of Rare Earths1993年第4期
论文作者：甘润今 张津燕
文章页码：269 - 272
摘 要：<正> ESR studies have been undertaken for various chemical composition of electron beam evapo-rated a-Si1-xGdx films with 0<x≤10at%.The experimental results show that the g value changes with（2.0043±0.0001）≤g≤（2.0054±0.0001）,the line shape factor l changes with（2.77±0.01）≤l≤（3.10±0.01）and the linewidth △Bppchanges with 6.40×10-4≤△Bpp≤7.00×10-4T.The experimental resultswere analysed with Barnes S.E.dynamic theory of ESR spectrum based on the characteristics of the ESRparameters.It was shown that the changes of ESR parameters depend on the compensation of Gd atoms forthe dangling bonds in a-Si film,and the exchange interaction between the conduction electrons and the spinsin the host materials.
甘润今，张津燕
摘 要：<正> ESR studies have been undertaken for various chemical composition of electron beam evapo-rated a-Si1-xGdx films with 0<x≤10at%.The experimental results show that the g value changes with（2.0043±0.0001）≤g≤（2.0054±0.0001）,the line shape factor l changes with（2.77±0.01）≤l≤（3.10±0.01）and the linewidth △Bppchanges with 6.40×10-4≤△Bpp≤7.00×10-4T.The experimental resultswere analysed with Barnes S.E.dynamic theory of ESR spectrum based on the characteristics of the ESRparameters.It was shown that the changes of ESR parameters depend on the compensation of Gd atoms forthe dangling bonds in a-Si film,and the exchange interaction between the conduction electrons and the spinsin the host materials.
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