Comparison of α particle detectors based on single-crystal diamond films grown in two types of gas atmospheres by microwave plasma-assisted chemical vapor deposition
来源期刊：International Journal of Minerals Metallurgy and Materials2020年第5期
论文作者：Yan-zhao Guo Jin-long Liu Jiang-wei Liu Yu-ting Zheng Yun Zhao Xiao-lu Yuan Zi-hao Guo Li-fu Hei Liang-xian Chen Jun-jun Wei Jian-peng Xing Cheng-ming Li
文章页码：703 - 712
摘 要：Chemical vapor deposition（CVD）-grown diamond films have been developed as irradiation-resistant materials to replace or upgrade current detectors for use in extreme radiation environments. However, their sensitivity in practical applications has been inhibited by space charge stability issues caused by defects and impurities in pure diamond crystal materials. In this study, two high-quality CVD-grown single-crystal diamond（SCD） detectors with low content of nitrogen impurities were fabricated and characterized. The intrinsic properties of the SCD samples were characterized using Raman spectroscopy, stereomicroscopy, and X-ray diffraction with the rocking curve mode, cathode luminescence（CL）, and infrared and ultraviolet-visible-near infrared spectroscopies. After packaging the detectors, the dark current and energy resolution under α particle irradiation were investigated. Dark currents of less than 5 pA at 100 V were obtained after annealing the electrodes, which is comparable with the optimal value previously reported. The detector that uses a diamond film with higher nitrogen content showed poor energy resolution, whereas the detector with more dislocations showed poor charge collection efficiency（CCE）. This demonstrates that the nitrogen content in diamond has a significant effect on the energy resolution of detectors, while the dislocations in diamond largely contribute to the poor CCE of detectors.
Yan-zhao Guo1，Jin-long Liu1，Jiang-wei Liu2，Yu-ting Zheng1，Yun Zhao1，Xiao-lu Yuan1，Zi-hao Guo1，Li-fu Hei1，Liang-xian Chen1，Jun-jun Wei1，Jian-peng Xing3，Cheng-ming Li1
1. Institute for Advanced Materials and Technology, University of Science and Technology Beijing2. Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS)3. Key Laboratory of Microelectronic Device and Integration Technology, Institute of Microelectronics of the Chinese Academy of Sciences
摘 要：Chemical vapor deposition（CVD）-grown diamond films have been developed as irradiation-resistant materials to replace or upgrade current detectors for use in extreme radiation environments. However, their sensitivity in practical applications has been inhibited by space charge stability issues caused by defects and impurities in pure diamond crystal materials. In this study, two high-quality CVD-grown single-crystal diamond（SCD） detectors with low content of nitrogen impurities were fabricated and characterized. The intrinsic properties of the SCD samples were characterized using Raman spectroscopy, stereomicroscopy, and X-ray diffraction with the rocking curve mode, cathode luminescence（CL）, and infrared and ultraviolet-visible-near infrared spectroscopies. After packaging the detectors, the dark current and energy resolution under α particle irradiation were investigated. Dark currents of less than 5 pA at 100 V were obtained after annealing the electrodes, which is comparable with the optimal value previously reported. The detector that uses a diamond film with higher nitrogen content showed poor energy resolution, whereas the detector with more dislocations showed poor charge collection efficiency（CCE）. This demonstrates that the nitrogen content in diamond has a significant effect on the energy resolution of detectors, while the dislocations in diamond largely contribute to the poor CCE of detectors.
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