Effects of Mg Doping Concentration on Resistive Switching Behavior and Properties of SrTi1-yMgyO3 Films
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2019年第4期
论文作者：张文博 王华 XU Jiwen LIU Guobao XIE Hang YANG Ling
文章页码：888 - 892
摘 要：SrTi1-yMgyO3 films were synthesized through sol-gel method on p+-Si substrates. The effects of Mg doping concentration on the microstructure, switching behavior and properties of SrTi1-yMgyO3 films were investigated. All SrTi1-yMgyO3 films are polycrystalline, but the grain becomes coarser, and the number of holes is reduced when the Mg doping content increases from 0.04 to 0.16. SrTi1-yMgyO3 films with different Mg doping concentrations all show bipolar resistive switching behaviors but display some differences in switching properties. When y = 0.08, the SrTi1-yMgyO3 films show the largest RHRS/RLRS of 105 and better fatigue endurance after 103 cycles. When y ≥ 0.08, the distribution of Vset and Vreset is narrow, indicating good stability of writing and erasing data for a resistive random access memory. At high-resistance state, the dominant conduction mechanism of SrTi1-yMgyO3 films is the Schottky emission mechanism. However, at low-resistance state, the dominant conduction mechanisms are the filamentary conduction and changes to space charge limited current when y = 0.16.
张文博，王华，XU Jiwen，LIU Guobao，XIE Hang，YANG Ling
School of Materials Science and Engineering, Guilin University of Electronic Technology
摘 要：SrTi1-yMgyO3 films were synthesized through sol-gel method on p+-Si substrates. The effects of Mg doping concentration on the microstructure, switching behavior and properties of SrTi1-yMgyO3 films were investigated. All SrTi1-yMgyO3 films are polycrystalline, but the grain becomes coarser, and the number of holes is reduced when the Mg doping content increases from 0.04 to 0.16. SrTi1-yMgyO3 films with different Mg doping concentrations all show bipolar resistive switching behaviors but display some differences in switching properties. When y = 0.08, the SrTi1-yMgyO3 films show the largest RHRS/RLRS of 105 and better fatigue endurance after 103 cycles. When y ≥ 0.08, the distribution of Vset and Vreset is narrow, indicating good stability of writing and erasing data for a resistive random access memory. At high-resistance state, the dominant conduction mechanism of SrTi1-yMgyO3 films is the Schottky emission mechanism. However, at low-resistance state, the dominant conduction mechanisms are the filamentary conduction and changes to space charge limited current when y = 0.16.
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