Bi-based Nanowire and Nanojunction Arrays:Fabrication and Physical Properties

Liang LI, Guanghai LI and Xiaosheng FANG Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China Nanoscale Materials Center, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan

摘 要：<正>This article reviews the recent developments in the fabrication and properties of one-dimensional （ID） Bi-based nanostructures, including Bi, Sb, Bix Sb1-x and Bi2Te3 nanowire arrays, and Bi-Bi and Bi-Sb nanojunction arrays. In this article, we present an effective method to fabricate Bi nanowire arrays with different diameters in anodic alumina membrane （AAM） with a single pore size by the pulsed electrodeposition. The fabrication of the high-filling and ordered Bi1-xSbx and Bi2Te3 single crystalline nanowire arrays, the Bi nanowire metal-semiconductor homojunction and Bi-Sb nanowire metal-semiconductor heterojunction arrays by the pulsed electrodeposition are reported. The factors controlling the composition, diameter, growth rate and orientation of the nanowires are analyzed, and the growth mechanism of the nanowire and nanojunction arrays are discussed together with the study of the electrical and thermal properties of Bi-based nanowires and nanojunctions. Finally, this review is concluded with some perspectives on the research directions and focuses in the Bi-based nanomaterials fields.

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