简介概要

Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth

来源期刊:International Journal of Minerals Metallurgy and Materials2015年第7期

论文作者:Rui Yang Wan-qi Jie Hang Liu

文章页码:755 - 761

摘    要:Using tellurium as a solvent, we grew ZnT e ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnT e exhibits p-type conductivity, with a carrier concentration of approximately 1014 cm-3, a mobility of approximately 300 cm2·V-1·s-1, and a resistivity of approximately 102 ·cm. A simple and effective method was proposed for chemical surface texturization of ZnT e using an HF:H2O2:H2O etchant. Textures with the sizes of approximately 1 μm were produced on {100}, {110}, and {111}Zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.

详情信息展示

Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth

Rui Yang,Wan-qi Jie,Hang Liu

State Key Laboratory of Solidification Processing, Northwestern Polytechnical University

摘 要:Using tellurium as a solvent, we grew ZnT e ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnT e exhibits p-type conductivity, with a carrier concentration of approximately 1014 cm-3, a mobility of approximately 300 cm2·V-1·s-1, and a resistivity of approximately 102 ·cm. A simple and effective method was proposed for chemical surface texturization of ZnT e using an HF:H2O2:H2O etchant. Textures with the sizes of approximately 1 μm were produced on {100}, {110}, and {111}Zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.

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