In situ photoemission study of interface and film formation during epitaxial growth of Er2O3 film on Si（001） substrate
来源期刊：Journal of Rare Earths2008年第6期
论文作者：朱燕艳 方泽波 廖灿 陈圣
文章页码：775 - 777
摘 要：<正>Synchrotron radiation photoemission spectroscopy was used to study the formation process of Er2O3/Si（001） interface and film during epitaxial growth on Si. A shift in the O core-level binding energy was found accompanied by a shift in the Er2O3 valence band maxi-mum. This shift depended on the oxide layer thickness and interfacial structure. An interfacial layer was observed at the initial growth of Er2O3 film on Si, which was supposed to be attributed to the effect of Er atom catalytic oxidation effect.
朱燕艳1，方泽波2，廖灿2，陈圣2
1. Department of Mathematics and Physics, Shanghai University of Electric Power2. Surface Physics Laboratory (National Key Laboratory), Fudan University
摘 要：<正>Synchrotron radiation photoemission spectroscopy was used to study the formation process of Er2O3/Si（001） interface and film during epitaxial growth on Si. A shift in the O core-level binding energy was found accompanied by a shift in the Er2O3 valence band maxi-mum. This shift depended on the oxide layer thickness and interfacial structure. An interfacial layer was observed at the initial growth of Er2O3 film on Si, which was supposed to be attributed to the effect of Er atom catalytic oxidation effect.
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