Effects of Nitridation Temperature on Characteristics of Gallium Nitride Thin Films Prepared Via Two-Step Method
来源期刊：Acta Metallurgica Sinica2015年第3期
论文作者：Chee Yong Fong Sha Shiong Ng Fong Kwong Yam Haslan Abu Hassan Zainuriah Hassan
文章页码：362 - 366
摘 要：In this research,the growth of GaN thin films on c-plane sapphire（0001） substrates via two-step method without the assist of buffer layer and catalysts was demonstrated.First,gallium oxide（Ga2O3） thin films were deposited on sapphire substrates by radio frequency magnetron sputtering method.The deposited Ga2O3 thin films were then nitridated at various temperatures.In this research,attention is focused on the influence of nitridation temperatures on the structural and optical properties of the synthesized GaN thin films.It is revealed that 950 ℃ is the optimal nitridation temperature for synthesizing hexagonal wurtzite GaN thin film with preferential（0002） growth direction.
Chee Yong Fong，Sha Shiong Ng，Fong Kwong Yam，Haslan Abu Hassan，Zainuriah Hassan
Nano-Optoelectronics Research and Technology Laboratory,School of Physics,Universiti Sains Malaysia
摘 要：In this research,the growth of GaN thin films on c-plane sapphire（0001） substrates via two-step method without the assist of buffer layer and catalysts was demonstrated.First,gallium oxide（Ga2O3） thin films were deposited on sapphire substrates by radio frequency magnetron sputtering method.The deposited Ga2O3 thin films were then nitridated at various temperatures.In this research,attention is focused on the influence of nitridation temperatures on the structural and optical properties of the synthesized GaN thin films.It is revealed that 950 ℃ is the optimal nitridation temperature for synthesizing hexagonal wurtzite GaN thin film with preferential（0002） growth direction.
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