Properties of boron doped ZnO films prepared by reactive sputtering method: Application to amorphous silicon thin film solar cells
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2020年第20期
论文作者：Sukanta Bose Sourav Mandal Asok K.Barua Sumita Mukhopadhyay
文章页码：136 - 143
摘 要：Reactive sputtered boron-doped zinc oxide（BZO） film was deposited from argon,hydrogen and boron gas mixture.The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target.Textured surface was obtained in the as-deposited films.The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio.By varying the gas concentration ratio,the best obtained resistivity ～6.51×10-4Ω-cm,mobility ～19.05 cm2 V-1 s-1 and sheet resistance ～7.23Ω/□ were obtained.At lower wavelength of light,the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are>85 %.We also fabricated amorphous silicon（a-Si） thin film solar cell on the best obtained BZO layers.The overall efficiency of the a-Si solar cell is 8.14 %,found on optimized BZO layer.
Sukanta Bose1，Sourav Mandal2，Asok K.Barua1，Sumita Mukhopadhyay1
1. Centre of Excellence for Green Energy and Sensor Systems, Indian Institute of Engineering Science and Technology2. Centre for Energy Studies, Indian Institute of Technology Delhi
摘 要：Reactive sputtered boron-doped zinc oxide（BZO） film was deposited from argon,hydrogen and boron gas mixture.The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target.Textured surface was obtained in the as-deposited films.The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio.By varying the gas concentration ratio,the best obtained resistivity ～6.51×10-4Ω-cm,mobility ～19.05 cm2 V-1 s-1 and sheet resistance ～7.23Ω/□ were obtained.At lower wavelength of light,the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are>85 %.We also fabricated amorphous silicon（a-Si） thin film solar cell on the best obtained BZO layers.The overall efficiency of the a-Si solar cell is 8.14 %,found on optimized BZO layer.
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