Influence of Pr3+ Doping on the Microstructure of ZnO Quantum Dots
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2015年第1期
论文作者：李宏 XIA Mengling LUO Kaifei WANG Paul W
文章页码：16 - 21
摘 要：Pr3+ doped ZnO quantum dots（QDs） were successfully synthesized by sol-gel process. X-ray diffraction（XRD） and X-ray Phtoelectron spectroscopy（XPS） were used to analyze the microstructure variation of ZnO QDs and the chemical environment of Pr3+ with increasing Pr3+ doping concentrations. Most of Pr3+ ions distribute on the surface of ZnO QDs while a few of them penetrate into the ZnO lattice to substitute Zn2+ which causes the lattice distortion and the change of the crystal size. With increasing concentration of Pr3+ ions, the crystal size of ZnO QDs firstly increases and then decreases meanwhile the amorphization gradually increases. New Pr-O-Zn bonds formed after Pr3+ doping and Pr3+ ions have at least two chemical bonding environments: one is Pr-O-Zn bond and the other is Pr-O bond surrounded by oxygen vacancies.
李宏1，XIA Mengling1，LUO Kaifei1，WANG Paul W2
1. State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology2. Department of Physics, Bradley University
摘 要：Pr3+ doped ZnO quantum dots（QDs） were successfully synthesized by sol-gel process. X-ray diffraction（XRD） and X-ray Phtoelectron spectroscopy（XPS） were used to analyze the microstructure variation of ZnO QDs and the chemical environment of Pr3+ with increasing Pr3+ doping concentrations. Most of Pr3+ ions distribute on the surface of ZnO QDs while a few of them penetrate into the ZnO lattice to substitute Zn2+ which causes the lattice distortion and the change of the crystal size. With increasing concentration of Pr3+ ions, the crystal size of ZnO QDs firstly increases and then decreases meanwhile the amorphization gradually increases. New Pr-O-Zn bonds formed after Pr3+ doping and Pr3+ ions have at least two chemical bonding environments: one is Pr-O-Zn bond and the other is Pr-O bond surrounded by oxygen vacancies.
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