Electronic structure and luminescence properties of Tb3+-activated NaBaBO3 green-emitting phosphor
来源期刊：JOURNAL OF RARE EARTHS2015年第9期
论文作者：郑将辉 程其进 吴顺情 陈蓉 蔡丽晗 陈朝
文章页码：933 - 938
摘 要：A novel green-emitting phosphor Tb3+ doped Na Ba BO3 was prepared using a conventional high temperature solid-state reaction method. The crystal structure and luminescence properties of Na Ba BO3:Tb3+ were studied. The Na Ba BO3 host was also investigated using density functional theory calculations. Our calculated lattice parameters of Na Ba BO3 host were found to be in excellent agreement with experiment. Theoretically, the host matrix Na Ba BO3 was a wide-gap semiconductor with a direct band gap of 3.66 e V, where the bottom of conduction band and the top of valence band were dominated by Ba 5d state and O 2p state, respectively. The excitation spectra indicated that the phosphor could be effectively excited by near ultraviolet light. The phosphor featured a satisfactory green performance with the highest photoluminescence intensity located at 543 nm excited by 377 nm light and the measured Commission Internationale de L’Eclairage（CIE） chromaticity was determined to be（0.2860, 0.4640）. The optimum Tb3+ concentration in Na Ba BO3 was 5.0 mol.%. The concentration quenching occurred when Tb3+ concentration was beyond 5.0 mol.% and the concentration quenching mechanism could be explained by the dipole-dipole interaction. The effects of charge compensators（including Li+, Na+ and K+） and temperature on the photoluminescence of Na Ba BO3:Tb3+ were also studied. The present work suggested that the Na Ba BO3:Tb3+ phosphor was a promising green-emitting material for near ultraviolet white light-emitting diodes.
郑将辉1，程其进1，吴顺情2，陈蓉1，蔡丽晗1，陈朝1,2
1. School of Energy Research, Xiamen University2. Department of Physics, Xiamen University
摘 要：A novel green-emitting phosphor Tb3+ doped Na Ba BO3 was prepared using a conventional high temperature solid-state reaction method. The crystal structure and luminescence properties of Na Ba BO3:Tb3+ were studied. The Na Ba BO3 host was also investigated using density functional theory calculations. Our calculated lattice parameters of Na Ba BO3 host were found to be in excellent agreement with experiment. Theoretically, the host matrix Na Ba BO3 was a wide-gap semiconductor with a direct band gap of 3.66 e V, where the bottom of conduction band and the top of valence band were dominated by Ba 5d state and O 2p state, respectively. The excitation spectra indicated that the phosphor could be effectively excited by near ultraviolet light. The phosphor featured a satisfactory green performance with the highest photoluminescence intensity located at 543 nm excited by 377 nm light and the measured Commission Internationale de L’Eclairage（CIE） chromaticity was determined to be（0.2860, 0.4640）. The optimum Tb3+ concentration in Na Ba BO3 was 5.0 mol.%. The concentration quenching occurred when Tb3+ concentration was beyond 5.0 mol.% and the concentration quenching mechanism could be explained by the dipole-dipole interaction. The effects of charge compensators（including Li+, Na+ and K+） and temperature on the photoluminescence of Na Ba BO3:Tb3+ were also studied. The present work suggested that the Na Ba BO3:Tb3+ phosphor was a promising green-emitting material for near ultraviolet white light-emitting diodes.
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