Electrical Properties of GeTe-based Ternary Alloys
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2018年第2期
论文作者：曹一琦 LI Zhigang WU Jianbo HUANG Xiaohua ZHANG Shengnan
文章页码：472 - 475
摘 要：Ge50-xSbxTe50 and Ge50-xBixTe50 ternary alloys were synthesized by vacuum melting at 1273 K with the starting materials of Ge, Bi, Sb, and Te. The lattice structures were analyzed based on X-ray diffraction patterns, which could all be indexed to R3m rhombic structure. Electrical properties measurements revealed that the Ge-Sb-Te ternary alloys were p-type semiconductors with high electrical conductivity of 4.5×105S?m-1 near room temperature. And the maximum electrical property was obtained at Ge45Sb5Te50, with the power factor of 2.49×10-3W?m-1K-2 at 640 K. Due to the existence of secondary phases, the electrical conductivity of Ge-Bi-Te system was lower and Seebeck coefficient was higher comparing with those of Ge-Sb-Te system.
曹一琦1，LI Zhigang1，WU Jianbo1，HUANG Xiaohua1，ZHANG Shengnan2
1. College of Physical and Electronic Engineering,Taizhou University2. Superconducting Materials Research Center,Northwest Institute for Non-ferrous Metal Research
摘 要：Ge50-xSbxTe50 and Ge50-xBixTe50 ternary alloys were synthesized by vacuum melting at 1273 K with the starting materials of Ge, Bi, Sb, and Te. The lattice structures were analyzed based on X-ray diffraction patterns, which could all be indexed to R3m rhombic structure. Electrical properties measurements revealed that the Ge-Sb-Te ternary alloys were p-type semiconductors with high electrical conductivity of 4.5×105S?m-1 near room temperature. And the maximum electrical property was obtained at Ge45Sb5Te50, with the power factor of 2.49×10-3W?m-1K-2 at 640 K. Due to the existence of secondary phases, the electrical conductivity of Ge-Bi-Te system was lower and Seebeck coefficient was higher comparing with those of Ge-Sb-Te system.
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