Structure and Magnetic Properties of Magnetostrictive FeGa Film on Single-Crystal（100） GaAs and（001） Si Substrate Fabricated by Pulsed Laser Deposition
来源期刊：Acta Metallurgica Sinica2018年第6期
论文作者：Y.Zhang M.Turghun C.J.Huang T.Wang F.F.Wang W.Z.Shi
文章页码：623 - 628
摘 要：FeGa thin film has been deposited on（100）-oriented GaAs and（001）-oriented Si substrates with different film thicknesses and laser energy densities at room temperature by pulsed laser deposition system.Materials structure and static magnetic of FeGa film have great changes depending on the substrate and energy density of pulsed laser.X-ray diffraction reveals the presence of first-order order–disorder structure ofgrain phase and disordered bcc A2 structure on GaAs substrate.The coercivity and remanence of FeGa film on GaAs substrate ratio show a regular dependence on the thickness and energy densities.However,film on Si substrate did not exhibit structure change,which can be attributed to a large lattice mismatch between FeGa and Si.
Y.Zhang1,2，M.Turghun1，C.J.Huang1，T.Wang1，F.F.Wang2，W.Z.Shi1,2
1. Key Laboratory of Optoelectronic Material and Device,Shanghai Normal University2. Mathematics and Science College,Shanghai Normal University
摘 要：FeGa thin film has been deposited on（100）-oriented GaAs and（001）-oriented Si substrates with different film thicknesses and laser energy densities at room temperature by pulsed laser deposition system.Materials structure and static magnetic of FeGa film have great changes depending on the substrate and energy density of pulsed laser.X-ray diffraction reveals the presence of first-order order–disorder structure ofgrain phase and disordered bcc A2 structure on GaAs substrate.The coercivity and remanence of FeGa film on GaAs substrate ratio show a regular dependence on the thickness and energy densities.However,film on Si substrate did not exhibit structure change,which can be attributed to a large lattice mismatch between FeGa and Si.
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