Preparation of CuInSe2 thin films by paste coating
来源期刊：Rare Metals2008年第6期
论文作者：NIE Hongboa, WANG Yanlaia, NI Peiranb, and GUO Shijua a School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing , China b Wuxi ASIC Micro Electronics Co. Ltd, Wuxi , China
文章页码：591 - 597
摘 要：Precursor pastes were obtained by milling Cu-In alloys and Se powders. CuInSe2 thin films were successfully prepared by precursor layers, which were coated using these pastes, and were annealed in a H2 atmosphere. The pastes were tested by laser particle diameter analyzer, si- multaneous thermogravimetric and differential thermal analysis instruments （TG-DTA）, and X-ray diffractometry （XRD）. Selenized films were characterized by XRD, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. The results indicate that chal- copyrite CuInSe2 is formed at 180°C and the crystallinity of this phase is improved as the temperature rises. All the CuInSe2 thin films, which were annealed at various temperatures, exhibit the preferred orientation along the （112） plane. The compression of precursor layers before selenization step is one of the most essential factors for the preparation of perfect CuInSe2 thin films.
NIE Hongboa, WANG Yanlaia, NI Peiranb, and GUO Shijua a School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China b Wuxi ASIC Micro Electronics Co. Ltd, Wuxi 214028, China
摘 要：Precursor pastes were obtained by milling Cu-In alloys and Se powders. CuInSe2 thin films were successfully prepared by precursor layers, which were coated using these pastes, and were annealed in a H2 atmosphere. The pastes were tested by laser particle diameter analyzer, si- multaneous thermogravimetric and differential thermal analysis instruments （TG-DTA）, and X-ray diffractometry （XRD）. Selenized films were characterized by XRD, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. The results indicate that chal- copyrite CuInSe2 is formed at 180°C and the crystallinity of this phase is improved as the temperature rises. All the CuInSe2 thin films, which were annealed at various temperatures, exhibit the preferred orientation along the （112） plane. The compression of precursor layers before selenization step is one of the most essential factors for the preparation of perfect CuInSe2 thin films.
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