The accelerating nanoscale Kirkendall effect in Co films–native oxide Si(100) system induced by high magnetic fields

Yue Zhao^1,2，Kai Wang²，Shuang Yuan³，Yonghui Ma⁴，Guojian Li²，Qiang Wang²

1. Institute of Microscale Optoelectronics, Shenzhen University2. Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University3. Department of New Energy Science and Engineering, School of Metallurgy, Northeastern University4. Institute of Metal Research, Chinese Academy of Sciences

摘 要：The morphology evolution and magnetic properties of Co films–native oxide Si(100) were investigated at 873, 973, and 1073 K in a high magnetic field of 11.5 T. Formation of Kirkendall voids in the Co films was found to cause morphology evolution due to the difference in diffusion flux of Co and Si atoms through the native oxide layer. The high magnetic fields had considerable effect on the morphology evolution by accelerating nanoscale Kirkendall effect. The diffusion mechanism in the presence of high magnetic fields was given to explain the increase of diffusion coefficient. The morphology evolution of Co films on native oxide Si(100) under high magnetic fields during annealing resulted in the magnetic properties variation.

关键词：