Ta-doped modified Gd2O3 film for a novel high k gate dielectric
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2019年第10期
论文作者：Shuan Li Yanqing Wu Guoling Li Hongen Yu Kai Fu Yong Wu Jie Zheng Wenhuai Tian Xingguo Li
文章页码：2305 - 2311
摘 要：Gadolinium oxide（Gd2O3） film has potential as a candidate gate dielectric to replace Hf O2. In this work,we provide a simple method by trace Ta（～1%） doping to significantly improve the dielectric properties of Gd2O3 film. And effects of annealing temperatures of Ta-doped Gd2O3（GTO） films are investigated in detail. Results show that GTO film annealed at 500℃ exhibits excellent performance as a novel gate dielectric material for integrated circuit, showing a small surface roughness of 0.199 nm, a large band gap of 5.45 e V, a high dielectric constant（k） of 21.2 and a low leakage current density（Jg） of 2.10 × 10-3A/cm2.All properties of GTO films are superior to pure Gd2O3 films and these GTO films meet the requirements for next-generation gate dielectrics. In addition, impedance spectrum is first used to analyze the equivalent circuit of GTO based metal-oxide-semiconductor（MOS） capacitors, which represents a new insight to understand observed electrical behaviors.
Shuan Li1,2，Yanqing Wu2，Guoling Li3，Hongen Yu2，Kai Fu1,2，Yong Wu2，Jie Zheng2，Wenhuai Tian1，Xingguo Li2
1. Department of Materials Physics and Chemistry, University of Science and Technology Beijing2. Beijing National Laboratory of Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University3. College of Materials Science and Engineering, Qingdao University
摘 要：Gadolinium oxide（Gd2O3） film has potential as a candidate gate dielectric to replace Hf O2. In this work,we provide a simple method by trace Ta（～1%） doping to significantly improve the dielectric properties of Gd2O3 film. And effects of annealing temperatures of Ta-doped Gd2O3（GTO） films are investigated in detail. Results show that GTO film annealed at 500℃ exhibits excellent performance as a novel gate dielectric material for integrated circuit, showing a small surface roughness of 0.199 nm, a large band gap of 5.45 e V, a high dielectric constant（k） of 21.2 and a low leakage current density（Jg） of 2.10 × 10-3A/cm2.All properties of GTO films are superior to pure Gd2O3 films and these GTO films meet the requirements for next-generation gate dielectrics. In addition, impedance spectrum is first used to analyze the equivalent circuit of GTO based metal-oxide-semiconductor（MOS） capacitors, which represents a new insight to understand observed electrical behaviors.
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