简介概要

Characteristics of atomic layer deposited transparent aluminumdoped zinc oxide thin films at low temperature

来源期刊:Rare Metals2016年第7期

论文作者:Fei-Long Zhao Jun-Chen Dong Nan-Nan Zhao Jing Wu De-Dong Han Jin-Feng Kang Yi Wang

文章页码:509 - 512

摘    要:Various aluminum-doped zinc oxide(AZO) films were prepared on Si substrate by atomic layer deposition(ALD) at 100℃. The effect of the composition of AZO films on their electrical, optical characteristics,structural property and surface topography was investigated. The appearance of electrical resistivity shows their semiconducting properties. In most of the visible light band, all the AZO films present transparency of more than 80%. Al doping suppresses the AZO film crystallization.When the Al doping concentration increases up to 3.95 at%, the AZO film has some small multicrystal grains with random orientation. Al doping improves the roughness of i-ZnO film. The root mean square(RMS) roughness of samples prepared by ALD is much smaller than that prepared by radio-frequency magnetron sputtering reported.

详情信息展示

Characteristics of atomic layer deposited transparent aluminumdoped zinc oxide thin films at low temperature

Fei-Long Zhao1,2,Jun-Chen Dong1,2,Nan-Nan Zhao1,2,Jing Wu1,2,De-Dong Han2,Jin-Feng Kang2,Yi Wang2

1. Shenzhen Graduate School,Peking University2. Institute of Microelectronics,Peking University

摘 要:Various aluminum-doped zinc oxide(AZO) films were prepared on Si substrate by atomic layer deposition(ALD) at 100℃. The effect of the composition of AZO films on their electrical, optical characteristics,structural property and surface topography was investigated. The appearance of electrical resistivity shows their semiconducting properties. In most of the visible light band, all the AZO films present transparency of more than 80%. Al doping suppresses the AZO film crystallization.When the Al doping concentration increases up to 3.95 at%, the AZO film has some small multicrystal grains with random orientation. Al doping improves the roughness of i-ZnO film. The root mean square(RMS) roughness of samples prepared by ALD is much smaller than that prepared by radio-frequency magnetron sputtering reported.

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