Design of 32 kbit one-time programmable memory for microcontroller units
来源期刊：中南大学学报(英文版)2012年第12期
论文作者：JEON Hwang-gon YANG Hui-ling CHOI In-hwa HA Pan-bong KIM Young-hee
文章页码：3475 - 3483
Key words：one-time programmable memory; micro controller unit; EEPROM tunnel oxide; small-area
Abstract: A 32 kbit OTP (one-time programmable) memory for MCUs (micro-controller units) used in remote controllers was designed. This OTP memory is used for program and data storage. It is required to apply 5.5 V to BL (bit-line) and 11 V to WL (word-line) for a OTP cell of 0.35 μm ETOX (EEPROM tunnel oxide) type by MagnaChip. We use 5 V transistors on column data paths to reduce the area of column data paths since they require small areas. In addition, we secure device reliability by using HV (high-voltage) transistors in the WL driver. Furthermore, we change from a static logic to a dynamic logic used for the WL driver in the core circuit. Also, we optimize the WD (write data) switch circuit. Thus, we can implement them with a small-area design. In addition, we implement the address predecoder with a small-area logic circuit. The area of the designed 32 kbit OTP with 5 V and HV devices is 674.725 μm×258.75 μm (=0.1745 mm2) and is 56.3% smaller than that using 3.3 V devices.
JEON Hwang-gon, YANG Hui-ling, CHOI In-hwa, HA Pan-bong, KIM Young-hee
(Department of Electronic Engineering, Changwon National University, 9 Sarim-Dong, Changwon 641-773, Korea)
Abstract:A 32 kbit OTP (one-time programmable) memory for MCUs (micro-controller units) used in remote controllers was designed. This OTP memory is used for program and data storage. It is required to apply 5.5 V to BL (bit-line) and 11 V to WL (word-line) for a OTP cell of 0.35 μm ETOX (EEPROM tunnel oxide) type by MagnaChip. We use 5 V transistors on column data paths to reduce the area of column data paths since they require small areas. In addition, we secure device reliability by using HV (high-voltage) transistors in the WL driver. Furthermore, we change from a static logic to a dynamic logic used for the WL driver in the core circuit. Also, we optimize the WD (write data) switch circuit. Thus, we can implement them with a small-area design. In addition, we implement the address predecoder with a small-area logic circuit. The area of the designed 32 kbit OTP with 5 V and HV devices is 674.725 μm×258.75 μm (=0.1745 mm2) and is 56.3% smaller than that using 3.3 V devices.
Key words:one-time programmable memory; micro controller unit; EEPROM tunnel oxide; small-area
