HISTORY AND RECENT DEVELOPMENTS OF TERAHERTZ WAVE GENERATION
来源期刊：Acta Metallurgica Sinica2003年第3期
论文作者：J.Nishizawa
Key words：THz wave generation; phonon interaction; semiconductor device;
Abstract: The unexplored terahertz (THz) region involves important phenomena of both fundamental and applied natures. Examples include phonon interactions, rotational transitions and intermolecular dynamics. Frequency tunable high power THz wave generation has been successfully achieved utilizing lattice resonance of LiNbO3 and GaP crystals, respectively. Semiconductor devices utilizing electron tunneling effect have also been developed.
J.Nishizawa1
(1.Director of Photodynamics Research Centerand Semiconductor Research Institute, 5199-1399 Aramaki,Aoba-ku, Sendai 980-0845, Japan)
Abstract:The unexplored terahertz (THz) region involves important phenomena of both fundamental and applied natures. Examples include phonon interactions, rotational transitions and intermolecular dynamics. Frequency tunable high power THz wave generation has been successfully achieved utilizing lattice resonance of LiNbO3 and GaP crystals, respectively. Semiconductor devices utilizing electron tunneling effect have also been developed.
Key words:THz wave generation; phonon interaction; semiconductor device;
【全文内容正在添加中】
