Epitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge（001） substrates with zero interface layer
来源期刊：Journal of Rare Earths2013年第11期
论文作者：张心强 屠海令 魏峰 熊玉华 杨萌萌 赵洪滨 杜军 王文武
文章页码：1092 - 1095
摘 要：The GHO（Gd2O3-doped HfO2）films were epitaxially grown on Ge（001）substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition（PLD）.Reflection high-energy electron diffraction（RHEED）and high-resolution transmission electron microscopy（HRTEM）observation revealed a sharp interface of GHO/Ge and orientation relationship corresponding to（001）GHO//（001）Ge and[011]GHO//[011]Ge.The band offset for GHO/Ge stack was evaluated to be 3.92 eV for valence band and 1.38 eV for conduction band by X-ray photoelectron spectrum.Small equivalent oxide thickness（0.49 nm）and interface state density（7×1011cm–2）were achieved from Au/Ti/GHO/Ge/Al capacitors.
张心强1，屠海令1,2，魏峰1，熊玉华1，杨萌萌1，赵洪滨1，杜军1，王文武3
1. Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals2. National Engineering Research Center for Semiconductor Materials, General Research Institute for Nonferrous Metals3. Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics, Chinese Academy of Sciences
摘 要：The GHO（Gd2O3-doped HfO2）films were epitaxially grown on Ge（001）substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition（PLD）.Reflection high-energy electron diffraction（RHEED）and high-resolution transmission electron microscopy（HRTEM）observation revealed a sharp interface of GHO/Ge and orientation relationship corresponding to（001）GHO//（001）Ge and[011]GHO//[011]Ge.The band offset for GHO/Ge stack was evaluated to be 3.92 eV for valence band and 1.38 eV for conduction band by X-ray photoelectron spectrum.Small equivalent oxide thickness（0.49 nm）and interface state density（7×1011cm–2）were achieved from Au/Ti/GHO/Ge/Al capacitors.
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