Waveguide mechanism and design of thermal contact resistance at metal rheologic interface

来源期刊：中国有色金属学报(英文版)2003年第3期

论文作者：胡仕成 黄明辉 李晓谦 钟掘

文章页码：579 - 584

Key words：free electron; phonon; rheologic interface; thermal contact resistance; oxide film

Abstract: The main factors and their varied disciplines affecting the heat transfer at the metal rheologic interface were studied from the waveguide mechanism of heat transfer of electrons and phonons, guiding the design of thermal contact resistance through studying the microscale mechanism of heat transfer at the interface. The results show that electron has stronger quantum tunneling effect when the thickness of oxide film is smaller than de Broglie wavelength of electron and the heat conduction of oxide film produces microscale effect. The thickness and nature of oxide film dominate the heat transfer at the metal rheologic interface. The main means to design the interface contact conductance are to control the formation of oxide film as well as the process of machining of roller surface and lubrication of interface.

基金信息：the National Key Fundamental Research and Development of China