High-performance Sb:SnO2 Compact Thin Film Based on Surfactant-free and Binder-free Sb:Sn3O4 Suspension
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2015年第8期
论文作者：Junhua Zhao Ruiqin Tan Ye Yang Wei Xu Jia Li Wenfeng Shen Guoqiang Wu Xufeng Yang Weijie Song
文章页码：815 - 821
摘 要：Surfactant-free and binder-free antimony-doped tin oxide（ATO） transparent conducting thin films were fabricated through spin coating and rapid annealing processes,in which nanosheets were assembled into a compact structure via self-contracting high pressure.The mechanism of this compact thin film formation was further proposed and analyzed.The compact ATO thin film had a low root mean square（RMS） roughness of 5.03 nm.This surfactant-free and binder-free compact ATO thin film delivered low resistivity of 3.04×10-2 Ω cm,stable resistivity which only increased 13%after exposing in 65%RH air for half a month,high transmittance of 92.70%at 550 nm,and high band gap energy of 4.07 eV.This effective strategy will provide new insight into the synthesis of low-cost and high-performance compact thin films.
Junhua Zhao1，Ruiqin Tan2，Ye Yang3，Wei Xu3，Jia Li3，Wenfeng Shen3，Guoqiang Wu1，Xufeng Yang1，Weijie Song3
1. College of Chemical and Material Engineering,Quzhou University2. Faculty of Information Science and Engineering,Ningbo University3. Ningbo Institute of Material Technology and Engineering,Chinese Academy of Sciences
摘 要：Surfactant-free and binder-free antimony-doped tin oxide（ATO） transparent conducting thin films were fabricated through spin coating and rapid annealing processes,in which nanosheets were assembled into a compact structure via self-contracting high pressure.The mechanism of this compact thin film formation was further proposed and analyzed.The compact ATO thin film had a low root mean square（RMS） roughness of 5.03 nm.This surfactant-free and binder-free compact ATO thin film delivered low resistivity of 3.04×10-2 Ω cm,stable resistivity which only increased 13%after exposing in 65%RH air for half a month,high transmittance of 92.70%at 550 nm,and high band gap energy of 4.07 eV.This effective strategy will provide new insight into the synthesis of low-cost and high-performance compact thin films.
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