氢离子注入硅片退火行为的高压电镜原位观察
来源期刊：中国有色金属学报1998年第4期
论文作者：王敬 屠海令 刘安生 张椿 周旗钢 朱悟新 高旻 李建明
文章页码：626 - 630
关键词：硅； 高压电子显微镜； 离子注入； 氢； 扩散
Key words：silicon； high voltage electron microscope； ion implantation； hydrogen; diffusion
摘 要：采用高压电子显微镜(HVEM)的原位观察技术，在1 MV加速电压和室温至650 ℃加热条件下，观察了氢离子注入硅片中缺陷层的变化。在500℃以下，氢离子注入缺陷层基本没有变化，在650 ℃保温时， 缺陷的密度逐渐降低， 样品中薄区域部分的缺陷在保温20 min后消失， 而厚区域部分在保温40 min后仍存有部分缺陷，说明缺陷的变化与样品厚度有关。用氢的扩散理论讨论了这一现象，提出氢可能是以H2分子的形式扩散的。
Abstract: In situ observation of microstructural defects in hydrogen implanted silicon annealed from room temperature to 650 ℃ has been carried out in a high voltage electron microscope operating at 1 MV. When the temeprature is below 500 ℃, no obvious change takes place in the defect layer caused by H+ ion implantation. The density of defect decreases gradually when the temperature rises to 650 ℃. Defects in thin region of the sample disappear after annealing at 650 ℃ for 20 min, while some defects still exist in thick region of the sample after annealing for 40min . This indicates that the evolution of defects depends on the thickness of the sample, which can be interpreted by the diffusion of hydrogen. It is proposed that diffusion occurs possibly through a hydrogen molecule form.
