Effects of substrate temperature and annealing on the anisotropic magnetoresistive property of NiFe films
来源期刊：Rare Metals2003年第3期
论文作者：WU Ping, WANG Fengping, QIU Hong, PAN Liqing, and TIAN Yue) Department of Physics, University of Science and Technology Beijing, Beijing , China) Beijing Keda-Tianyu Microelectronic Material Technology Development Co. Ltd, Beijing , China
文章页码：202 - 205
摘 要：<正> Ni83Fei7 films with a thickness of about 100 ran were deposited on thermal oxidized silicon substrates at ambient temperature, 240, 350, and 410℃ by DC magnetron sputtering. The deposition rate was about 0.11 nm/s. The as-deposited films were annealed at 450, 550, and 650℃, respectively, in a vacuum lower than 3 x 10-3 Pa for 1 h. The Ni83Fei7 films mainly grow with a crystalline orientation of [111] in the direction of the film growth. With the annealing temperature increasing, the [111] orientation enhances. For films deposited at all four different temperatures, the significant improvement on anisotropic magnetoresistance occurs at the annealing temperature higher than 550℃. But for films deposited at ambient temperatures and 240 ℃, the anisotropic magnetoresistance can only rise to about 1% after 650 ℃ annealing. For films deposited at 350℃ and 410℃, the anisotropic magnetoresistance rises to about 3.8% after 650℃ annealing. The atomic force microscopy （AFM） observation shows a significant i
WU Ping, WANG Fengping, QIU Hong, PAN Liqing, and TIAN Yue1) Department of Physics, University of Science and Technology Beijing, Beijing 100083, China2) Beijing Keda-Tianyu Microelectronic Material Technology Development Co. Ltd, Beijing 100083, China
摘 要：<正> Ni83Fei7 films with a thickness of about 100 ran were deposited on thermal oxidized silicon substrates at ambient temperature, 240, 350, and 410℃ by DC magnetron sputtering. The deposition rate was about 0.11 nm/s. The as-deposited films were annealed at 450, 550, and 650℃, respectively, in a vacuum lower than 3 x 10-3 Pa for 1 h. The Ni83Fei7 films mainly grow with a crystalline orientation of [111] in the direction of the film growth. With the annealing temperature increasing, the [111] orientation enhances. For films deposited at all four different temperatures, the significant improvement on anisotropic magnetoresistance occurs at the annealing temperature higher than 550℃. But for films deposited at ambient temperatures and 240 ℃, the anisotropic magnetoresistance can only rise to about 1% after 650 ℃ annealing. For films deposited at 350℃ and 410℃, the anisotropic magnetoresistance rises to about 3.8% after 650℃ annealing. The atomic force microscopy （AFM） observation shows a significant i
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