简介概要

Photoanode Activity of ZnO Nanotube Based Dye-Sensitized Solar Cells

来源期刊:JOURNAL OF MATERIALS SCIENCE TECHNOLOG2011年第11期

论文作者:R. Ranjusha P. Lekha K.R.V. Subramanian V. Nair Shantikumar A. Balakrishnan

文章页码:961 - 966

摘    要:Vertical ZnO nanotube (ZNT) arrays were synthesized onto an indium doped tin oxide (ITO) glass substrate by a simple electrochemical deposition technique followed by a selective etching process. Scanning electron microscopy (SEM) showed formation of well-faceted hexagonal ZNT arrays spreading uniformly over a largearea. X-ray diffraction (XRD) of ZNT layer showed substantially higher intensity for the (0002) diffractionpeak, indicating that the ZnO crystallites were well aligned with their c-axis. Profilometer measurements ofthe ZNT layer showed an average thickness of ~7 μm. Diameter size distribution (DSD) analysis showedthat ZNTs exhibited a narrow diameter size distribution in the range of 65–120 nm and centered at ~75nm. The photoluminescence (PL) spectrum measurement showed violet and blue luminescence peaks thatwere centered at 410 and 480 nm, respectively, indicating the presence of internal defects. Ultra-violet (UV)spectroscopy showed major absorbance peak at ~348 nm, exhibiting an increase in energy gap value of 3.4 eV.By employing the formed ZNTs as the photo-anode for a dye-sensitized solar cell (DSSC), a full-sun conversion efficiency of 1.01% was achieved with a fill factor of 54%. Quantum efficiency studies showed the maximumof incident photon-to-electron conversion efficiency in a visible region located at 520–550 nm range.

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Photoanode Activity of ZnO Nanotube Based Dye-Sensitized Solar Cells

R. Ranjusha,P. Lekha,K.R.V. Subramanian,V. Nair Shantikumar,A. Balakrishnan

摘 要:Vertical ZnO nanotube (ZNT) arrays were synthesized onto an indium doped tin oxide (ITO) glass substrate by a simple electrochemical deposition technique followed by a selective etching process. Scanning electron microscopy (SEM) showed formation of well-faceted hexagonal ZNT arrays spreading uniformly over a largearea. X-ray diffraction (XRD) of ZNT layer showed substantially higher intensity for the (0002) diffractionpeak, indicating that the ZnO crystallites were well aligned with their c-axis. Profilometer measurements ofthe ZNT layer showed an average thickness of ~7 μm. Diameter size distribution (DSD) analysis showedthat ZNTs exhibited a narrow diameter size distribution in the range of 65–120 nm and centered at ~75nm. The photoluminescence (PL) spectrum measurement showed violet and blue luminescence peaks thatwere centered at 410 and 480 nm, respectively, indicating the presence of internal defects. Ultra-violet (UV)spectroscopy showed major absorbance peak at ~348 nm, exhibiting an increase in energy gap value of 3.4 eV.By employing the formed ZNTs as the photo-anode for a dye-sensitized solar cell (DSSC), a full-sun conversion efficiency of 1.01% was achieved with a fill factor of 54%. Quantum efficiency studies showed the maximumof incident photon-to-electron conversion efficiency in a visible region located at 520–550 nm range.

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