Fabrication of tungsten films by metallorganic chemical vapor deposition

Yi Li1,2), Jin-pu Li1), Cheng-chang Jia1), and Xue-quan Liu2) 1) School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China 2) Powder Metallurgy Laboratory, Central Iron & Steel Research Institute, Beijing 100081, China

摘 要：Tungsten films growing on copper substrates were fabricated by metallorganic chemical vapor deposition （MOCVD）. The chemi-cal purity, crystallographic phase, cross-sectional texture, and resistivity of the deposited films both before and after annealing treatment were investigated by X-ray energy-dispersive spectroscopy （EDS）, X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and four-point probe method. It is found that the films deposited at 460°C are metastable β-W with （211） orientation and can change into α-W when an-nealed in high-purity hydrogen atmosphere at high temperature. There are small amounts of C and O in the films, and the W content of the films increases with increasing deposition temperature and also goes up after annealing in high-purity hydrogen atmosphere. The films have columnar microstructures and the texture evolution during their growth on copper substrates can be divided into three stages. The resistivity of the as-deposited films is in the range of 87-104 μΩ·cm, and low resistivity is obtained after annealing in high-purity hydrogen atmosphere.

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