Miscibility Calculation of GaN1-xPx Ternary Alloys
来源期刊：JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者：Zhang Rong Zheng Youdou Chen Dunjun Zhang Kaixiao Zhu Weihua Lin Jianwei
Key words：GaN1-xPx ternary alloys; miscibility; strain;
Abstract: A theoretical calculation of the miscibility gap with considering the mismatch strain and elastic parameters was performed for the GaN1-xPx ternary alloys on (0001) GaN/sapphire substrates based on the strictly regular solution model. The calculated results show that the boundary of the spinodal isotherm shifts from x=0.06 to x=0.25 at the growth temperature of 1200 K as the strain factor increases from 0 to 1, indicating that the strain in the GaN1-xPx layers can suppress the phase separation. Meanwhile, with the increase of the effective elastic parameters of GaN and GaP, the available maximum P content also increases slightly at the growing temperature.
Zhang Rong1，Zheng Youdou1，Chen Dunjun1，Zhang Kaixiao2，Zhu Weihua2，Lin Jianwei2
(1.Department of Physics, Nanjing University, Nanjing 210093, China;
2.College of Science, Hohai University, Nanjing 210098, China)
Abstract:A theoretical calculation of the miscibility gap with considering the mismatch strain and elastic parameters was performed for the GaN1-xPx ternary alloys on (0001) GaN/sapphire substrates based on the strictly regular solution model. The calculated results show that the boundary of the spinodal isotherm shifts from x=0.06 to x=0.25 at the growth temperature of 1200 K as the strain factor increases from 0 to 1, indicating that the strain in the GaN1-xPx layers can suppress the phase separation. Meanwhile, with the increase of the effective elastic parameters of GaN and GaP, the available maximum P content also increases slightly at the growing temperature.
Key words:GaN1-xPx ternary alloys; miscibility; strain;
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