Effects of A Top SiO2 Surface Layer on Cavity Formation and Helium Desorption in Silicon
来源期刊：JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者：Lü Yiying Alquier D Yin Lijun
Key words：silicon; SiO2 layer; helium implantation; cavities; helium release;
Abstract: Cz n-type Si (100) samples with and without a top SiO2 layer were implanted with 40 keV helium ions at the same dose of 5×1016 cm-2. Cross-sectional transmission electron microscopy (XTEM) and thermal desorption spectroscopy (THDS) were used to study the thermal evolution of cavities upon and helium thermal release, respectively. XTEM results show that the presence of the top SiO2 layer could suppress the thermal growth of cavities mainly formed in the region close to the SiO2/Si interface, which leads to the reduction in both the cavity band and cavity density. THDS results reveal that the top oxide layer could act as an effective barrier for the migration of helium atoms to the surface, and it thus gives rise to the formation of more overpresurrized bubbles and to the occurrence of a third release peak located at about 1100 K. The results were qualitively discussed by considering the role of the oxide surface layer in defect migration and evolution upon annealing.
Lü Yiying1，Alquier D2，Yin Lijun1，Liu Changlong1
(1.Department of Physics, School of Science, Tianjin University, Tianjin 300072, China;
2.LMP/STMicroelectronics, 16 rue Pierre et Marie Curie, B. P. 7155, F37071 Tours Cedex, France;
3.Tianjin Key Laboratory of Low Dimension Materials Physics and Preparing Technology, Institute of Advanced Materials Physics Faculty of Science, Tianjin 300072, China)
Abstract:Cz n-type Si (100) samples with and without a top SiO2 layer were implanted with 40 keV helium ions at the same dose of 5×1016 cm-2. Cross-sectional transmission electron microscopy (XTEM) and thermal desorption spectroscopy (THDS) were used to study the thermal evolution of cavities upon and helium thermal release, respectively. XTEM results show that the presence of the top SiO2 layer could suppress the thermal growth of cavities mainly formed in the region close to the SiO2/Si interface, which leads to the reduction in both the cavity band and cavity density. THDS results reveal that the top oxide layer could act as an effective barrier for the migration of helium atoms to the surface, and it thus gives rise to the formation of more overpresurrized bubbles and to the occurrence of a third release peak located at about 1100 K. The results were qualitively discussed by considering the role of the oxide surface layer in defect migration and evolution upon annealing.
Key words:silicon; SiO2 layer; helium implantation; cavities; helium release;
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