Realizing Zinc Blende GaAs/AlGaAs Axial and Radial Heterostructure Nanowires by Tuning the Growth Temperature

Jingwei Guo,Hui Huang,Xiaomin Ren,Xin Yan,Shiwei Cai,Wei Wang,Yongqing Huang,Qi Wang and Xia Zhang Key Laboratory of Information Photonics & Optical Communications Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100876,China

摘 要：Vertical zinc blende GaAs/AlGaAs heterostructure nanowires were grown at different temperatures by metalorganic chemical vapor deposition via Au-assisted vapor-liquid-solid mechanism.It was found that radial growth can be enhanced by increasing the growth temperature.The growth of radial heterostructure can be realized at temperature higher than 500℃,while the growth temperature of axial heterostructure is lower than 440℃.The room temperature photoluminescence properties of the nanowires were investigated and the relevant growth mechanism was discussed.

关键词：