Ferroelectric properties of sol-gel derived Nd-doped SrBi4Ti4O15 thin films
来源期刊：JOURNAL OF RARE EARTHS2008年第4期
论文作者：FAN Suhua WANG Peiji REN Yanxia ZHANG Fengqing
Key words：SrBi4-xNdxTi4O15 thin films; sol-gel method; ferroelectric properties; rare earths;
Abstract: Neodymium-doped strontium bismuth titanate (SrBi4-xNdxTi4O15) ferroelectric thin films were fabricated using the sol-gel method on Pt/Ti/SiO2/Si substrates. The influence of Nd content on the microstructure and ferroelectric properties of SrBi4-xNdxTi4O15 thin films were systematically studied. The results indicated that the SrBi3.88Nd0.12Ti4O15 (SBNT0.12) thin films had better ferroelectric properties, with a remanent polarization of (2Pr) of 34.3 μC/cm2 and a coercive field (2Ec) of 220 kV/cm. This could be attributed to the fact that SBNT0.12 ferroelectric thin films consisted of more and larger ball-like grains, approximately 150-200 nm, with structure distortion, which greatly contributed to the improvement of the ferroelectric properties of the films. Furthermore, the film exhibited a good fatigue resistant property. The value of 2Pr after 1010 switching cycles did not change significantly. The SrBi3.88Nd0.12Ti4O15 films were promising candidates for the application of FeRAMs.
FAN Suhua1，WANG Peiji2，REN Yanxia3，ZHANG Fengqing1
(1.Department of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101, China;
2.Department of Science, University of Jinan, Jinan 250022, China;
3.Jiyuan Vocational and Technical College, Jiyuan 454650, China)
Abstract:Neodymium-doped strontium bismuth titanate (SrBi4-xNdxTi4O15) ferroelectric thin films were fabricated using the sol-gel method on Pt/Ti/SiO2/Si substrates. The influence of Nd content on the microstructure and ferroelectric properties of SrBi4-xNdxTi4O15 thin films were systematically studied. The results indicated that the SrBi3.88Nd0.12Ti4O15 (SBNT0.12) thin films had better ferroelectric properties, with a remanent polarization of (2Pr) of 34.3 μC/cm2 and a coercive field (2Ec) of 220 kV/cm. This could be attributed to the fact that SBNT0.12 ferroelectric thin films consisted of more and larger ball-like grains, approximately 150-200 nm, with structure distortion, which greatly contributed to the improvement of the ferroelectric properties of the films. Furthermore, the film exhibited a good fatigue resistant property. The value of 2Pr after 1010 switching cycles did not change significantly. The SrBi3.88Nd0.12Ti4O15 films were promising candidates for the application of FeRAMs.
Key words:SrBi4-xNdxTi4O15 thin films; sol-gel method; ferroelectric properties; rare earths;
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