Optimizing ef?ciency of polycrystalline p-Si anode organic light-emitting diode
来源期刊：Rare Metals2016年第11期
论文作者：Jian-Xing Luo Wei Wang Hu Meng Wan-Jin Xu Guo-Gang Qin
文章页码：826 - 830
摘 要：Optimizing ef?ciencies of organic light-emitting diodes（OLEDs） with a structure of Al/glass/nanometerthick polycrystalline p-Si（NPPS） anode/SiO2/N’-bis-（1-naphthl）-diphenyl-1,1’-biphenyl-4,4’-diamine（NPB）/tris（8-hydroxyquinoline） aluminum（Alq3）/4,7-diphenyl-1,10-phenanthroline（BPhen）:Cs2CO3/Sm/Au were studied. The NPPS anodes were fabricated by magnetron sputtering（MS）Si and Ni layers followed by Ni-induced crystallization of the amorphous Si layers. By adjusting the resistivity of the p-Si target adopted in MS, the electroluminescent ef?ciency of the OLED was optimized. When the resistivity of the p-Si target is 0.01 Ω·cm, the current and power ef?ciencies of the NPPS anode OLED reach maximum values of 6.7 cd ·A-1and 4.64 lm ·W-1, respectively, which are 2.7 and 3.1 times those of the resistivity-optimized bulk p-Si anode counterpart and 2.9 and 3.7 times those of the indium tin oxide（ITO） anode counterpart, and then, the physical reasons were discussed.
Jian-Xing Luo1，Wei Wang1，Hu Meng1，Wan-Jin Xu1，Guo-Gang Qin1,2
1. State Key Laboratory for Mesoscopic Physics,School of Physics,Peking University2. Key Laboratory of Semiconductor Materials,Chinese Academy of Science
摘 要：Optimizing ef?ciencies of organic light-emitting diodes（OLEDs） with a structure of Al/glass/nanometerthick polycrystalline p-Si（NPPS） anode/SiO2/N’-bis-（1-naphthl）-diphenyl-1,1’-biphenyl-4,4’-diamine（NPB）/tris（8-hydroxyquinoline） aluminum（Alq3）/4,7-diphenyl-1,10-phenanthroline（BPhen）:Cs2CO3/Sm/Au were studied. The NPPS anodes were fabricated by magnetron sputtering（MS）Si and Ni layers followed by Ni-induced crystallization of the amorphous Si layers. By adjusting the resistivity of the p-Si target adopted in MS, the electroluminescent ef?ciency of the OLED was optimized. When the resistivity of the p-Si target is 0.01 Ω·cm, the current and power ef?ciencies of the NPPS anode OLED reach maximum values of 6.7 cd ·A-1and 4.64 lm ·W-1, respectively, which are 2.7 and 3.1 times those of the resistivity-optimized bulk p-Si anode counterpart and 2.9 and 3.7 times those of the indium tin oxide（ITO） anode counterpart, and then, the physical reasons were discussed.
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