Direct patterning of reduced graphene oxide/graphene oxide memristive heterostructures by electron-beam irradiation
来源期刊：JOURNAL OF MATERIALS SCIENCE TECHNOLOG2020年第3期
论文作者：Olesya O.Kapitanova Evgeny V.Emelin Sergey G.Dorofeev Pavel V.Evdokimov Gennady N.Panin Youngmin Lee Sejoon Lee
文章页码：237 - 243
摘 要：Memristive heterostructures, composed of reduced graphene oxide with different degree of reduction,were demonstrated through a simple method of ‘direct electron-beam writing’ on graphene oxide. Irradiation with an electron beam at various doses and accelerating voltages made it possible to define highand low-conductivity graphene-oxide areas. The electron beam-reduced graphene oxide/graphene oxide heterostructure clearly exhibited a nonlinear behavior and a well-controlled resistive switching characteristic at a low operating-voltage range（< 1 V）. The proposed memristive heterostructures are promising for highly-efficient digital storage and information process as well as for analogous neuromorphic computations.
Olesya O.Kapitanova1,2，Evgeny V.Emelin3，Sergey G.Dorofeev1，Pavel V.Evdokimov1，Gennady N.Panin3,4，Youngmin Lee5，Sejoon Lee5,6
1. Lomonosov Moscow State University2. Moscow Institute of Physics and Technology3. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences4. Nano Information Technology Academy, Dongguk University-Seoul5. Quantum-Functional Semiconductor Research Center, Dongguk University-Seoul6. Department of Semiconductor Science, Dongguk University-Seoul
摘 要：Memristive heterostructures, composed of reduced graphene oxide with different degree of reduction,were demonstrated through a simple method of ‘direct electron-beam writing’ on graphene oxide. Irradiation with an electron beam at various doses and accelerating voltages made it possible to define highand low-conductivity graphene-oxide areas. The electron beam-reduced graphene oxide/graphene oxide heterostructure clearly exhibited a nonlinear behavior and a well-controlled resistive switching characteristic at a low operating-voltage range（< 1 V）. The proposed memristive heterostructures are promising for highly-efficient digital storage and information process as well as for analogous neuromorphic computations.
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