Sol-gel preparation and phosphorescence property of Mn2+-doped zinc boro-silicate glass thin films
来源期刊：Rare Metals2011年第3期
论文作者：LI Fengfenga, ZHANG Mingxia, HOU Guiqina, SHEN Yib, LIU Zhigangb, and LI Hongshengb a College of Light Industry, Hebei Polytechnic University, Tangshan , China b Key Laboratory for Inorganic Non-metallic Materialogy of Hebei Province, College of Materials Science and Engineering, Hebei Polytechnic University, Tangshan , China
文章页码：298 - 303
摘 要：Mn2+-doped zinc borosilicate （ZBSM） glass thin films were first synthesized by sol-gel method. In the experiment, a thin gel film was depos-ited onto quartz glass substrates by dip-coating method and then heat-treated to form a Mn2+-doped zinc borosilicate glass thin film. Long lasting phosphorescence （LLP） and photo-stimulated long lasting phosphorescence （PSLLP） were found in the film sample. According to fluorescence spectra, LLP emission spectra, and PSLLP emission spectra, both LLP and PSLLP emissions are attributed to the energy level transition of 4Eg→4A1g from Mn2+. Both the phosphorescence intensity decay curves contain a fast decay component and another slow decay one. The thermoluminescence （TL） spectra show that the sample has two kinds of traps at least and their energy level values are about 0.8 eV and 1.02 eV, which could be estimated by the Randall and Willcins formula. The infrared absorption spectra （IR） consist of characteristic vi-bration bands of Si-O-Si, Si-O-Zn, B-O in [BO3], B-O group, and Zn-O in [ZnO4]. Moreover, image storage and logical operation of the ZBSM film were carried out successfully through an experiment analogues of optical storage.
LI Fengfenga, ZHANG Mingxia, HOU Guiqina, SHEN Yib, LIU Zhigangb, and LI Hongshengb a College of Light Industry, Hebei Polytechnic University, Tangshan 063000, China b Key Laboratory for Inorganic Non-metallic Materialogy of Hebei Province, College of Materials Science and Engineering, Hebei Polytechnic University, Tangshan 063009, China
摘 要：Mn2+-doped zinc borosilicate （ZBSM） glass thin films were first synthesized by sol-gel method. In the experiment, a thin gel film was depos-ited onto quartz glass substrates by dip-coating method and then heat-treated to form a Mn2+-doped zinc borosilicate glass thin film. Long lasting phosphorescence （LLP） and photo-stimulated long lasting phosphorescence （PSLLP） were found in the film sample. According to fluorescence spectra, LLP emission spectra, and PSLLP emission spectra, both LLP and PSLLP emissions are attributed to the energy level transition of 4Eg→4A1g from Mn2+. Both the phosphorescence intensity decay curves contain a fast decay component and another slow decay one. The thermoluminescence （TL） spectra show that the sample has two kinds of traps at least and their energy level values are about 0.8 eV and 1.02 eV, which could be estimated by the Randall and Willcins formula. The infrared absorption spectra （IR） consist of characteristic vi-bration bands of Si-O-Si, Si-O-Zn, B-O in [BO3], B-O group, and Zn-O in [ZnO4]. Moreover, image storage and logical operation of the ZBSM film were carried out successfully through an experiment analogues of optical storage.
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