Microstructure and electrical properties of La2O3-doped ZnO-based varistor thin films by sol-gel process
来源期刊：中南大学学报(英文版)2014年第1期
论文作者：XU Dong(徐东) JIANG Bin(姜斌) CUI Feng-dan(崔凤单) YANG Yong-tao(杨永涛) XU Hong-xing(徐红星) SONG Qi(宋琪) YU Ren-hong(于仁红)
文章页码：9 - 13
Key words：zinc oxide; varistor; film; sol-gel process; electrical properties; microstructure
Abstract: Microstructure and electrical properties of La2O3-doped ZnO-Bi2O3 thin films prepared by sol–gel process have been investigated. X-ray diffraction shows that most diffraction peaks of ZnO are equal, and the crystals of ZnO grow well. Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness. The nonlinear V–I characteristics of the films show that La2O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion, with the leakage current of 0.25 mA, the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.
XU Dong(徐东)1, 2, JIANG Bin(姜斌)1, CUI Feng-dan(崔凤单)1, YANG Yong-tao(杨永涛)1, XU Hong-xing(徐红星)1, SONG Qi(宋琪)1, YU Ren-hong(于仁红)1, 3
(1. School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China;
2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of
Electronic Science and Technology of China, Chengdu 610054, China;
3. Changzhou Ming Errui Ceramics Co., Ltd., Changzhou 213102, China)
Abstract:Microstructure and electrical properties of La2O3-doped ZnO-Bi2O3 thin films prepared by sol–gel process have been investigated. X-ray diffraction shows that most diffraction peaks of ZnO are equal, and the crystals of ZnO grow well. Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness. The nonlinear V–I characteristics of the films show that La2O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion, with the leakage current of 0.25 mA, the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.
Key words:zinc oxide; varistor; film; sol-gel process; electrical properties; microstructure
