Atomic-resolution studies on reactions between basal dislocations and {10■2} coherent twin boundaries in a Mg alloy

Huhu Su¹，Xinzhe Zhou¹，Shijian Zheng²，Hengqiang Ye^1,3，Zhiqing Yang¹

1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Materials Science and Engineering, University of Science and Technology of China2. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology

摘 要：Reactions between basal 〈a₆₀〉 dislocations and {10■2} coherent twin boundaries（CTBs） in a Mg alloy were studied with atomic resolution. Individual dislocation-CTB reactions produced steps with residual dislocations and multiple t winnin g dislocations（TDs） gliding away, consequently resulting in TB migration. Reactions between {10■2} CTBs and low-angle grain boundaries composed of basal 〈a₆₀〉 dislocations created either basal-prismatic/prismatic-basal interfaces or asymmetric tilt grain boundaries, depending on whether TDs gliding away or not. Not only the emission of TDs by dislocation-TB reactions may drive TB migration, but also the resultant steps or facets along TBs can act as TD sources to facilitate TB migration. Our results indicate that roughness or severe loss of local coherency induced by dislocation-TB reactions does not intrinsically impede TB migration in Mg alloys. Dislocation-TB reactions may provide another feasible strategy to improve the ductility of Mg alloys, in addition to other techniques like grain refinement and texture modification.

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