HREM study on stacking structure of SiGe/Si infrared detector

来源期刊：中国有色金属学报(英文版)2000年第2期

论文作者：刘安生 刘峥 邵贝羚 王敬

文章页码：149 - 155

Key words：heterogeneous interface; infrared detectors; high resolution electron microscopy(HREM)

Abstract: Stacking structure and defects in SiGe/P-Si infrared detector were studied by using localization high resolution electron microscopy (HREM). The photosensitive region in the detector consists of 3 P⁺ -Si_0.65Ge_0.35 layers and 2 UD-Si (undoped Si) layers. The interface between Si_0.65Ge_0.35 and UD-Si is not sharp and has a transition zone with non-uniform contrast. The misfit stress of interface is distributed gradiently along the normal direction of the interface. Therefore the crystal defects and serious lattice deformations on the interface have not been found. A defect area with a shape of inverted triangle exists in the edge of photosensitive region. The main types of the defects in the area are stacking faults and microtwins. The stacking faults are on (1 11), and the thickness of the most microtwins is less than 4 interplanar spacing and the twin plane is (1 11). The Si_0.65Ge_0.35 and UD-Si layers on amorphous SiO₂ layer consist of polycrystals grown by random nucleation, and are in wave.