Thickness Dependent Physical Properties of Thermally Evaporated Nanocrystalline CdSe Thin Films
来源期刊：Acta Metallurgica Sinica2015年第10期
论文作者：Anuradha Purohit Subhash Chander Satya Pal Nehra Mahendra Singh Dhaka
文章页码：1299 - 1304
摘 要：This paper presents a study on thickness dependent physical properties of cadmium selenide thin films. The films of thickness 445, 631 and 810 nm were deposited employing thermal evaporation technique on glass and ITO-coated glass substrates followed by thermal annealing in air atmosphere at 200 °C. These films were subjected to X-ray diffractometer, UV–Vis spectrophotometer, scanning electron microscopy（SEM） and electrometer for structural, optical,surface morphological and electrical analysis respectively. The structural analysis reveals that the films are nanocrystalline in nature with cubic phase and preferred orientation（111）. The crystallographic parameters such as lattice constant, interplanar spacing, grain size, internal strain, dislocation density, number of crystallites per unit area and texture coefficient are calculated and discussed. The optical band gap is found in the range 1.75–1.92 e V and observed to increase with thickness.The SEM study shows that the annealed films are uniform, fully covered and well defined. The electrical analysis shows that the conductivity is varied with film thickness and found within the order of semiconductor behavior.
Anuradha Purohit1，Subhash Chander1，Satya Pal Nehra2,3，Mahendra Singh Dhaka1,3
1. Department of Physics, Mohanlal Sukhadia University3. Microelectronics Research Center, Iowa State University of Science and Technology
摘 要：This paper presents a study on thickness dependent physical properties of cadmium selenide thin films. The films of thickness 445, 631 and 810 nm were deposited employing thermal evaporation technique on glass and ITO-coated glass substrates followed by thermal annealing in air atmosphere at 200 °C. These films were subjected to X-ray diffractometer, UV–Vis spectrophotometer, scanning electron microscopy（SEM） and electrometer for structural, optical,surface morphological and electrical analysis respectively. The structural analysis reveals that the films are nanocrystalline in nature with cubic phase and preferred orientation（111）. The crystallographic parameters such as lattice constant, interplanar spacing, grain size, internal strain, dislocation density, number of crystallites per unit area and texture coefficient are calculated and discussed. The optical band gap is found in the range 1.75–1.92 e V and observed to increase with thickness.The SEM study shows that the annealed films are uniform, fully covered and well defined. The electrical analysis shows that the conductivity is varied with film thickness and found within the order of semiconductor behavior.
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