Oxygen Incorporation in Czochralski Growth of Silicon under a Horizontal Magnetic Field
来源期刊：Rare Metals1990年第1期
论文作者：Wang Tihu Li Yingchun Qin Fu General Research Institute for Non-ferrous Metals,Beijing,
文章页码：52 - 57
摘 要：<正> A mechanism of oxygen transportation in Czochralski growth of silicon crystals under a horizontal magnetic field（HMCZ）is proposed.Oxygen depleted surface melt,driven to the growth interface by the thermal Marangoni flow.determines oxygenconcentration in the grown crystals.Systematic study was carried out to investigate effects of growth parameters on oxygen in-corporation into crystals.
Wang Tihu Li Yingchun Qin Fu General Research Institute for Non-ferrous Metals,Beijing,100088
摘 要：<正> A mechanism of oxygen transportation in Czochralski growth of silicon crystals under a horizontal magnetic field（HMCZ）is proposed.Oxygen depleted surface melt,driven to the growth interface by the thermal Marangoni flow.determines oxygenconcentration in the grown crystals.Systematic study was carried out to investigate effects of growth parameters on oxygen in-corporation into crystals.
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