Structural and physical properties of permalloy thin films prepared by DC magnetron sputtering at different substrate temperature

Fengping Wang Ping Wu Hong Qiu, Liqing Pan, Huanping Liu Yue Tian, and Sheng Luo1) Department of Physics, University of Science and Technology Beijing, Beijing 100083, China2) Beijing Keda-Tianyu Microelectronic Materials Technology Development Co. Ltd., Beijing 100083, China

摘 要：<正> Permalloy Ni80Fe20 films have been grown on thermal oxidized Si （111） wafers by magnetron sputtering at well-controlled substrate temperatures of 300, 500, 640 and 780 K in 0.65 Pa argon pressure. The base pressure was about 1×10-4 Pa. The deposition rate was about 5 nm/min for all the films. The structure of the films was studied using X-ray diffraction, scanning electron microscopy and atomic force microscopy. The composition of the films was analyzed using scanning Auger microprobe. The resistance and magnetoresistance of the films were measured using four-point probe technique. The results show that the content of oxygen in the films decreases gradually with raising substrate temperature. In addition, the surface morphology of the films presents notable change with the increasing of the substrate temperature; the residual gases and defects decrease and the grains have coalesced evidently, and then the grains have grown up obviously and the texture of （111） orientation develops gradually in the grow

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