Crystal Growth and Characterization of Ca3NbGa3Si2O14 Single Crystal
来源期刊：JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者：Yu Guangwei Cheng Xiufeng Guo Shiyi Yuan Duorong Li Zhanfa Shi Xuzhong
Key words：czochralski method; gallium compounds; atomic force microscopy;
Abstract: Single crystals of Ca3NbGa3Si2O14 (CNGS) with ordered Ca3Ga2Ge4O14 (CGG) structure were successfully grown from stoichiometric melts by conventional Czochralski technique along the a-axis and two large (001) facets and two small (100) facets appear in every crystal. An arrangement of parallel steps and a clear height change were observed in (001) facet by atomic force microscopy (AFM). High-resolution X-ray diffraction (HRXRD) results indicate that CNGS crystals have good quality and free low-angle boundaries. The crystals also exhibit good optical quality and high optical transmittance in c-direction.
Yu Guangwei1，Cheng Xiufeng1，Guo Shiyi1，Yuan Duorong1，Li Zhanfa1，Shi Xuzhong1
(1.State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China)
Abstract:Single crystals of Ca3NbGa3Si2O14 (CNGS) with ordered Ca3Ga2Ge4O14 (CGG) structure were successfully grown from stoichiometric melts by conventional Czochralski technique along the a-axis and two large (001) facets and two small (100) facets appear in every crystal. An arrangement of parallel steps and a clear height change were observed in (001) facet by atomic force microscopy (AFM). High-resolution X-ray diffraction (HRXRD) results indicate that CNGS crystals have good quality and free low-angle boundaries. The crystals also exhibit good optical quality and high optical transmittance in c-direction.
Key words:czochralski method; gallium compounds; atomic force microscopy;
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