Effect of oxygen pressure on electrical transport properties for（110） oriented La2/3Sr1/3MnO3 films directly deposited on silicon
来源期刊：JOURNAL OF RARE EARTHS2013年第4期
论文作者：李廷先 李扩社 于敦波 张飞鹏 张铭 于凤军
文章页码：376 - 380
摘 要：La2/3Sr1/3MnO3 films with（110） preferred orientation were deposited on Si（100） substrate without any buffer layer by pulsed laser deposition technique.Effect of oxygen pressure on orientation,surface morphology,and electrical transport properties were investigated.The film deposited at 10 Pa presented（110） preferred orientation with the best crystalline quality,the largest grain size,and the smallest roughness.The（110） oriented film presented higher metal-insulator transition temperature,and the lower resistivity than that of the samples without preferred orientation.
李廷先1，李扩社2，于敦波2，张飞鹏3，张铭4，于凤军1
1. College of Physics and Electrical Engineering,Anyang Normal University2. National Engineering Research Center for Rare earth Materials,General Research Institute for Nonferrous Metals,Grirem Advanced Materials Co.,Ltd.3. Department of Mathematics and Physics,Henan University of Urban Construction4. College of Materials Science and Engineering,Beijing University of Technology
摘 要：La2/3Sr1/3MnO3 films with（110） preferred orientation were deposited on Si（100） substrate without any buffer layer by pulsed laser deposition technique.Effect of oxygen pressure on orientation,surface morphology,and electrical transport properties were investigated.The film deposited at 10 Pa presented（110） preferred orientation with the best crystalline quality,the largest grain size,and the smallest roughness.The（110） oriented film presented higher metal-insulator transition temperature,and the lower resistivity than that of the samples without preferred orientation.
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