Defects in Fast-Neutron Irradiated Nitrogen-Doped Czochralski Silicon after Annealing at High Temperature
来源期刊:JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者:Chen Guifeng Liu Lili Li Yangxian Yang Shuai Sun Yong Ma Qiaoyun
Key words:nitrogen-doped Czochralski silicon (NCZ-Si); neutron irradiation; oxygen precipitation; FTIR;
Abstract: Fast-neutron irradiated nitrogen-doped Czochralski silicon (NCZ-Si) was annealed at 1100 ℃ for different time, then FTIR and optical microscope were used to study the behavior of oxygen. It is found that [Oi] increase at the early stage then decrease along with the increasing of anneal time. High density induced-defects can be found in the cleavage plane. By comparing NCZ-Si with Czochralski silicon (CZ-Si), [Oi] in NCZ-Si decrease more after anneal 24 h.
Chen Guifeng1,Liu Lili1,Li Yangxian1,Yang Shuai1,Sun Yong1,Ma Qiaoyun1
(1.School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China)
Abstract:Fast-neutron irradiated nitrogen-doped Czochralski silicon (NCZ-Si) was annealed at 1100 ℃ for different time, then FTIR and optical microscope were used to study the behavior of oxygen. It is found that [Oi] increase at the early stage then decrease along with the increasing of anneal time. High density induced-defects can be found in the cleavage plane. By comparing NCZ-Si with Czochralski silicon (CZ-Si), [Oi] in NCZ-Si decrease more after anneal 24 h.
Key words:nitrogen-doped Czochralski silicon (NCZ-Si); neutron irradiation; oxygen precipitation; FTIR;
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