Improved resistive switching stability of Pt/ZnO/CoO_x /ZnO/Pt structure for nonvolatile memory devices
来源期刊：Rare Metals2013年第6期
论文作者：Guang Chen Cheng Song Feng Pan
文章页码：544 - 549
摘 要：For Pt（Ag）/ZnO single-layer/Pt structure,random 10 formation and rupture of conductive filaments composed by oxygen vacancies or metallic ions often cause dispersion problems of resistive switching（RS）parameters,which is disadvantageous to devices application.In this study,ZnO/CoOx/ZnO（ZCZ）tri-layers were utilized as the switching layers to investigate their RS properties as compared with ZnO-based single-layer devices.It is interestingly noted that Pt/ZCZ/Pt devices show quite stable bipolar RS behaviors with little resistance value fluctuations compared to Ag/ZCZ/Pt devices and Pt（Ag）/ZnO/Pt devices,which minimize the dispersion of the resistances of RS.This highly stable RS effect of Pt/ZCZ/Pt structure would be promising for high density memory devices.
摘要：For Pt（Ag）/ZnO single-layer/Pt structure,random 10 formation and rupture of conductive filaments composed by oxygen vacancies or metallic ions often cause dispersion problems of resistive switching（RS）parameters,which is disadvantageous to devices application.In this study,ZnO/CoOx/ZnO（ZCZ）tri-layers were utilized as the switching layers to investigate their RS properties as compared with ZnO-based single-layer devices.It is interestingly noted that Pt/ZCZ/Pt devices show quite stable bipolar RS behaviors with little resistance value fluctuations compared to Ag/ZCZ/Pt devices and Pt（Ag）/ZnO/Pt devices,which minimize the dispersion of the resistances of RS.This highly stable RS effect of Pt/ZCZ/Pt structure would be promising for high density memory devices.
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