Growth and Properties of In-Doped Semi-insulating GaAs Crystals
来源期刊：Rare Metals1989年第3期
论文作者：Ma Bichun Wang Yonghong Ma Sansheng General Research Institute for Non-ferrous Metals,Beijing,China
文章页码：57 - 60
摘 要：<正> Semi-insulating（SI）GaAs doped with indium has been grown and characterized.The relationship between the dislocationdensity and dopant concentration has been discussed.Study of the uniformity of electric properties of In-doped SI-GaAs,whichhas been annealed at 950℃ for 6h under arsenic pressure,associates with decreases of point defects and arsenic vacancies.
摘要：<正> Semi-insulating（SI）GaAs doped with indium has been grown and characterized.The relationship between the dislocationdensity and dopant concentration has been discussed.Study of the uniformity of electric properties of In-doped SI-GaAs,whichhas been annealed at 950℃ for 6h under arsenic pressure,associates with decreases of point defects and arsenic vacancies.
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