二维短沟道SOI-MOSFET器件的背栅效应

来源期刊：中南大学学报(自然科学版)1992年第6期

论文作者：周婷俐

文章页码：744 - 747

关键词：背栅效应; 扭曲效应; 复合—产出率

Key words：back-gate effect; Kink effect; recombination-generation rate

摘    要：文内提出了一种正确的直流稳态二维短沟道SOI-MOSFET器件的数值模型.所选用的基本方程是:泊松方程、两种载流子的电流连续性方程和电流密度方程.这个模型从SOI器件的特殊结构出发,着重考虑了复合-产出率对器件内部参数的影响,分析了SOI-MOSFET器件的背栅效应以及I-V特性的扭曲(Kink)效应产生的机理.

Abstract: An exact number simulator for steady-state two-dimensional short-channelSOI devices is presented. Basic equations are Poinsson's equation, the current con-tinuity equations and current density equations for two kinds of carriers. Thesimulator, considering the special structure of SOI devices, studies the influencesof recombination-generation rate on parameters of internal devices and analyzesthe back-gate effect and the principle of Kink effect of I-V characteristics.