Effects of Germanium on Movement of Dislocations in p-Type Czochralski Silicon
来源期刊:JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者:Zhao Yiying Yang Deren Li Dongsheng
Key words:Czochralski silicon; germanium-doped; dislocation;
Abstract: By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon was investigated. Experimental results show that the dislocations in germanium-doped Czochralski silicon move shorter and slower than those in Czochralski silicon undoping with germanium when the concentration of germanium is over 1×1018 cm-3. The retarding velocity of dislocations is contributed to the dislocations pinning effect of the strain field introduced by the high concentration germanium, and the Ge4B cluster and the oxygen precipitation those are preferred to form at higher concentration germanium.
Zhao Yiying1,Yang Deren1,Li Dongsheng1
(1.State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China)
Abstract:By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon was investigated. Experimental results show that the dislocations in germanium-doped Czochralski silicon move shorter and slower than those in Czochralski silicon undoping with germanium when the concentration of germanium is over 1×1018 cm-3. The retarding velocity of dislocations is contributed to the dislocations pinning effect of the strain field introduced by the high concentration germanium, and the Ge4B cluster and the oxygen precipitation those are preferred to form at higher concentration germanium.
Key words:Czochralski silicon; germanium-doped; dislocation;
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