AlN-based surface acoustic wave resonators on platinum bottom electrodes for high-temperature sensing applications
来源期刊：Rare Metals2016年第5期
论文作者：Chuan Li Xing-Zhao Liu Bin Peng Lin Shu Yan-Rong Li
文章页码：408 - 411
摘 要：Surface acoustic wave（SAW） resonators with Pt/AlN/Si and Pt/AlN/Pt/Si configurations were fabricated by lift-off photolithography techniques. High-temperature performances of both configurations were investigated for temperature sensor applications. AlN films grown on Ptcoated Si substrates exhibit a lower（002） preferred orientation than those grown on Si substrates. The center frequencies of Pt/AlN/Si and Pt/AlN/Pt/Si configurations at room temperature are 424.1 and 456.4 MHz, respectively.The SAW was limited by Pt bottom electrodes to propagate in AlN layer. The temperature coefficient of frequency（TCF） values of Pt/AlN/Si and Pt/AlN/Pt/Si configurations are-51.6 9 10-6 and-69.2 9 10-6°C-1, respectively.Compared with that of Pt/AlN/Si configuration, the TCF value of Pt/AlN/Pt/Si configuration decreases by 34.1 %.AlN resonator with the Pt floating bottom electrodes provides a large, quasi-constant temperature sensitivity which is suitable for temperature sensor applications.
Chuan Li1，Xing-Zhao Liu1,2，Bin Peng1,2，Lin Shu1，Yan-Rong Li1,2
1. School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China2. State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China
摘 要：Surface acoustic wave（SAW） resonators with Pt/AlN/Si and Pt/AlN/Pt/Si configurations were fabricated by lift-off photolithography techniques. High-temperature performances of both configurations were investigated for temperature sensor applications. AlN films grown on Ptcoated Si substrates exhibit a lower（002） preferred orientation than those grown on Si substrates. The center frequencies of Pt/AlN/Si and Pt/AlN/Pt/Si configurations at room temperature are 424.1 and 456.4 MHz, respectively.The SAW was limited by Pt bottom electrodes to propagate in AlN layer. The temperature coefficient of frequency（TCF） values of Pt/AlN/Si and Pt/AlN/Pt/Si configurations are-51.6 9 10-6 and-69.2 9 10-6°C-1, respectively.Compared with that of Pt/AlN/Si configuration, the TCF value of Pt/AlN/Pt/Si configuration decreases by 34.1 %.AlN resonator with the Pt floating bottom electrodes provides a large, quasi-constant temperature sensitivity which is suitable for temperature sensor applications.
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