退火温度对钽基RuO₂·nH₂O电沉积薄膜电容性能的影响

来源期刊：中南大学学报(自然科学版)2006年第4期

论文作者：甘卫平 黎小辉 欧定斌 覃政辉

文章页码：660 - 664

关键词：电沉积; RuO₂·nH₂O薄膜;电容;退火温度

Key words：electrodeposition; RuO₂·nH₂O films; capacitance; annealing temperature

摘    要：以RuCl₃·xH₂O的水溶液为电沉积溶液,通过恒流电沉积法在钽箔上电沉积一层RuO₂·nH₂O薄膜,研究退火温度对RuO₂·nH₂O薄膜的电容性能的影响;采用CHI660B电化学测试仪和循环伏安法对薄膜的电容性能进行测试;分别采用扫描电子显微电镜、能谱仪及X射线衍射仪对薄膜的形貌和微孔形态、薄膜元素及薄膜的物相进行分析。结果表明,未经退火处理的RuO₂·nH₂O薄膜的电容性能不稳定,在循环伏安法测试中电容量随循环次数的增加而降低;将RuO₂·nH₂O薄膜分别在不同温度(100, 150, 200, 250和300℃)下进行的2 h的退火处理,经退火处理后的RuO₂·nH₂O薄膜的电容性能经过60次的循环后趋于稳定,其中,经过100℃退火处理的RuO₂·nH₂O薄膜的比电容最大,其比电容为0.083 8 F/cm²。

Abstract: RuO₂·nH₂O films used as cathode of supercapacitor were deposited on tantalum foils in water solution of RuCl₃·xH₂O by galvanostatic technique. The effect of annealing temperature on the capacitance of RuO₂·nH₂O films was studied by using an electrochemical system of CHI660B. The micrograph, element and structure of RuO₂·nH₂O films were respectively analyzed by scanning electron microscopy, energy dispersive spectroscopy and X-ray diffractrometer.The results show that the capacitance of RuO₂·nH₂O films unannealed is unstable. Annealing at temperatures of 100, 150, 200, 250 and 300℃for 2 h respectively, the capacitance of RuO₂·nH₂O becomes stable after 60 cycles. The specific capacitance of RuO₂·nH₂O films annealed at 100℃reaches the maximum of 0.0838 F/cm².