LPE Growth of InAsPSb on InAs:Melt Composition,Lattice Mismatch and Surface Morphology
来源期刊：Rare Metals1990年第1期
论文作者：Zhang Yonggang Zhou Ping Chen Huiying Pan Huizhen Shanghai Institute of Metallurgy,A cademia Sinica
文章页码：46 - 51
摘 要：<正> The LPE growth of quaternary InAs1-x-yPxSby with x=0.2 and y=0.09 on InAs substrate has been studied.This composi-tion is very suitable for the laser and detector applications at about 2.5μm.We show that in InAsPSb/InAs system there is a de-terminate relation between the surface morphology and the lattice mismatch of the epi-wafers,by which we can easily control themelt composition to grow high quality hetero-structures.The reason has been discussed.The p-n junctions with fairly good car-rier profile have been prepared in this system.
Zhang Yonggang Zhou Ping Chen Huiying Pan Huizhen Shanghai Institute of Metallurgy,A cademia Sinica
摘 要：<正> The LPE growth of quaternary InAs1-x-yPxSby with x=0.2 and y=0.09 on InAs substrate has been studied.This composi-tion is very suitable for the laser and detector applications at about 2.5μm.We show that in InAsPSb/InAs system there is a de-terminate relation between the surface morphology and the lattice mismatch of the epi-wafers,by which we can easily control themelt composition to grow high quality hetero-structures.The reason has been discussed.The p-n junctions with fairly good car-rier profile have been prepared in this system.
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