Effects of LaNiO3 Interlayer on the Microstructures and Electrical Properties of Ba0.9Sr0.1Ti0.99Mn0.01O3 Multilayer
来源期刊：Journal Of Wuhan University Of Technology Materials Science Edition2016年第6期
论文作者：洪学鹍 SHAO Tan SHAO Xueyi WANG Tao 张德宝 LIU Yushen FENG Jinfu
文章页码：1280 - 1283
摘 要：The aim of this work was to investigate the effects of low-resistivity interlayer on the physical properties of periodic Ba0.9Sr0.1Ti0.99Mn0.01O3（BSTM） multilayers prepared by a chemical solution deposition method. A LaNiO3（LNO） layer was inserted into the periodic BSTM multilayer artificially to form a sandwiched configuration of BSTM/LNO/BSTM. The capacitances at low frequencies（<100 k Hz） of the sandwiched multilayer are significantly enhanced compared to that of the pure BSTM multilayer. The space charge accumulated at the LNO layer was proposed to explain the enhancement based on Maxwell-Wagner（M-W） model. However, LNO interlayer leads to an increase in the leakage current. A non-Ohmic conduction region is observed for BSTM/LNO/BSTM multilayer when the electric field exceeds 100 k V/cm. The results offer a new approach to achieve dielectric films with high dielectric constant.
洪学鹍，SHAO Tan，SHAO Xueyi，WANG Tao，张德宝，LIU Yushen，FENG Jinfu
College of Physics and Electronic Engineering,Changshu Institute of Technology
摘 要：The aim of this work was to investigate the effects of low-resistivity interlayer on the physical properties of periodic Ba0.9Sr0.1Ti0.99Mn0.01O3（BSTM） multilayers prepared by a chemical solution deposition method. A LaNiO3（LNO） layer was inserted into the periodic BSTM multilayer artificially to form a sandwiched configuration of BSTM/LNO/BSTM. The capacitances at low frequencies（<100 k Hz） of the sandwiched multilayer are significantly enhanced compared to that of the pure BSTM multilayer. The space charge accumulated at the LNO layer was proposed to explain the enhancement based on Maxwell-Wagner（M-W） model. However, LNO interlayer leads to an increase in the leakage current. A non-Ohmic conduction region is observed for BSTM/LNO/BSTM multilayer when the electric field exceeds 100 k V/cm. The results offer a new approach to achieve dielectric films with high dielectric constant.
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