Vanadium Defects Formation Mechanism in Undoped GaN Grown on Silicon
来源期刊：JOURNAL OF RARE EARTHS2006年增刊第1期
论文作者：Hao Qiuyan Zhang Wei Teng Xiaoyun Sun Shilong Liu Caichi Zhao Liwei
Key words：undoped GaN; Vanadium defect; dislocation; transmission electron microscopy;
Abstract: V defects in GaN layer grown on Si (111) using metalorganic chemical vapor deposition (MOCVD) were investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM) and energy-dispersive X-ray spectrometer (EDS). Dislocations are the origination of V defects. Stress field around dislocations induce the concentration of C atoms, furthermore, slow growth rate on those {10-11} planes are suggested as being responsible for the initiation of V defects. The formation mechanism of V defects was discussed.
Hao Qiuyan1，Zhang Wei1，Teng Xiaoyun1，Sun Shilong1，Liu Caichi1，Zhao Liwei1
(1.School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China)
Abstract:V defects in GaN layer grown on Si (111) using metalorganic chemical vapor deposition (MOCVD) were investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM) and energy-dispersive X-ray spectrometer (EDS). Dislocations are the origination of V defects. Stress field around dislocations induce the concentration of C atoms, furthermore, slow growth rate on those {10-11} planes are suggested as being responsible for the initiation of V defects. The formation mechanism of V defects was discussed.
Key words:undoped GaN; Vanadium defect; dislocation; transmission electron microscopy;
【全文内容正在添加中】
